Logic gate的問題，透過圖書和論文來找解法和答案更準確安心。 我們找到下列免費下載的地點或者是各式教學

半導體元件物理與製程：理論與實務(四版)

為了解決Logic gate的問題，作者劉傳璽,陳進來 這樣論述：

　　以深入淺出的方式，系統性地介紹目前主流半導體元件(CMOS)之元件物理與製程整合所必須具備的基礎理論、重要觀念與方法、以及先進製造技術。內容可分為三個主軸：第一至第四章涵蓋目前主流半導體元件必備之元件物理觀念、第五至第八章探討現代與先進的CMOS IC之製造流程與技術、第九至第十二章則討論以CMOS元件為主的IC設計和相關半導體製程與應用。由於強調觀念與實用並重，因此儘量避免深奧的物理與繁瑣的數學；但對於重要的觀念或關鍵技術均會清楚地交代，並盡可能以直觀的解釋來幫助讀者理解與想像，以期收事半功倍之效。   　　本書宗旨主要是提供讀者在積體電路製造工程上的know-how與know-wh

y；並在此基礎上，進一步地介紹最新半導體元件的物理原理與其製程技術。它除了可作為電機電子工程、系統工程、應用物理與材料工程領域的大學部高年級學生或研究生的教材，也可以作為半導體業界工程師的重要參考   本書特色   　　●包含實務上極為重要，但在坊間書籍幾乎不提及的WAT，與鰭式電晶體(Fin-FET)、環繞式閘極電晶體(GAA-FET)等先進元件製程，以及碳化矽(SiC)與氮化鎵(GaN)功率半導體等先進技術。   　　●大幅增修習題與內容，以求涵蓋最新世代積體電路製程技術之所需。   　　●以最直觀的物理現象與電機概念，清楚闡釋深奧的元件物理觀念與繁瑣的數學公式。 　 　　●適合大專以上學

校課程、公司內部專業訓練、半導體從業工程師實務上之使用。

Logic gate進入發燒排行的影片

二維材料於邏輯元件與記憶體內運算應用

為了解決Logic gate的問題，作者鍾昀晏 這樣論述：

半導體產業在過去半個世紀不斷地發展，塊材材料逐漸面臨電晶體微縮的物理極限，因此我們開始尋找替代方案。由於二維材料天生的原子級材料厚度與其可抑制短通道效應能力，被視為半導體產業極具未來發展性材料。此篇論文為研究二維材料二硫化鉬的N型通道元件之製作技術與其材料的特性與應用。首先，我們使用二階段硫化製程所製備的二硫化鉬沉積高介電材料並使用X-射線能譜儀（XPS）與光致發光譜（PL）進行分析，量測二硫化鉬與四種高介電材料的能帶對準，參考以往製程經驗，可結論二氧化鉿是有潛力介電層材料在二硫化鉬上，並作為我們後續元件的主要閘極介電層。接著使用二階段硫化法製作鈮（Nb）摻雜的二硫化鉬，Ｐ型的鈮摻雜可提升載

子摻雜濃度用以降低金半介面的接觸電阻，透過不同製程方式製作頂部接觸和邊緣接觸的兩種金半介面結構，傳輸線模型(TLM)分析顯示出，邊緣接觸結構比頂部接觸結構的接觸電阻率低了兩個數量級以上，並藉由數值疊代方式得知層間電阻率是導致頂部接觸結構有較高接觸電阻率主因，並指出邊緣接觸之金半介面在二維材料元件的潛在優勢。在電晶體研究上，我們使用化學氣相沉積（CVD）合成的二硫化鉬成功製作出單層Ｎ型通道元件，將此電晶體與記憶體元件相結合，用雙閘極結構將讀（read）與寫（write）分成上下兩個獨立控制的閘極，並輸入適當脈衝訊號以改變儲存在電荷儲存層的載子量，藉由本體效應（Body effect）獲得足夠大的

記憶區間（Memory window），可擁有高導電度比（GMAX/GMIN = 50）與低非線性度（Non-linearity= -0.8/-0.3）和非對稱性（Asymmetry = 0.5），展示出了二維材料在類神經突觸元件記憶體內運算應用上的可能性。除了與記憶體元件結合外，我們亦展示二維材料電晶體作為邏輯閘的應用，將需要至少兩個傳統矽基元件才可表現的邏輯閘特性，可於單一二維材料電晶體上展現出來，並在兩種邏輯閘（NAND/NOR）特性作切換，二維材料的可折疊特性亦具有潛力於電晶體密度提升。我們進一步使用電子束微影系統製作奈米等級短通道元件，首先使用金屬輔助化學氣相沉積 (Metal-as

sisted CVD)方式合成出高品質的二維材料二硫化鎢 (WS2)，並成功製作次臨界擺幅（Subthreshold Swing, S.S.）約為97 mV/dec.且高達106的電流開關比（ION/IOFF ratio）的40奈米通道長度二硫化鎢Ｐ型通道電晶體，其電特性與文獻上的二硫化鉬N型通道電晶體可說是相當，可作為互補式場效電晶體。另一方面，深入了解二維材料其材料特性後，可知在厚度縮薄仍可保持極高的機械強度，有潛力作為奈米片電晶體的通道材料。故於論文最後我們針對如何透過對元件製作優化提供了些許建議。

Innovations in Electrical and Electronics Engineering: Proceedings of the 4th Icieee 2019

為了解決Logic gate的問題，作者 這樣論述：

Dr. H. S. Saini is a Managing Director for Guru Nanak Institutions and obtained his Ph.D. in the field of Computer Science. He has over 22 years of experience at university/college level in teaching UG/PG students and has guided several B.Tech., M.Tech., and Ph.D. projects. He has published/presente

d more than 30 high-quality research papers in international and national journals and proceedings of international conferences. He is the editor for Journal of Innovations in Electrical and Electronics Engineering (JIEEE) published by Guru Nanak Publishers. He has two books to his credit. Dr. H. S.

Saini is a lover of innovation and is an advisor for NBA/NAAC accreditation process to many institutions in India and abroad. Dr. T. Srinivasulu, Dean, Department of Electronics & Communication Engineering, Kakatiya University, Warangal, obtained M.Tech. from IIT Dhanbad, and Ph.D. degree from Kyus

hu University, Japan. He was completed proficiency courses and diplomas from IISc Bangalore, IIT Kharagpur, CEDT Gorakhpur, and NRDC New Delhi. He worked as Scientist at NIRM, Government of India Research Institute, around two decades. He published over 142 research papers in various international a

nd national journals and conferences. He is reviewer for International Journal of Measurements, Elsevier Publisher, and ISOI Journal. He obtained product patent of MBSC system and commercialized. He is regular reviewer to Indian and abroad IEEE conference papers as TPC member. He has successfully co

mpleted 15 industry-, DST-, and AICTE-sponsored research projects. He is author to a book entitled Real Time Systems for Coal Mine Applications. He has received several awards, honors and distinctions, International Bridge Fellowship, International JSPS Fellowship, International JSPS Medals, best pa

per awards, Gold Card NSL USA. He is Fellow of Institution of Electronics and Telecommunication Engineers and Fellow of Telangana Academy of Sciences. He is the advisory board member of IC, Cambridge University, UK. He was secretary to Instrument Society of India, Hyderabad, and EC member of IJAA. H

e is the life member of ISTE, BCSI, ISCA, and ISOI. His areas of research include real-time systems, wireless sensor networks/IOT, and cognitive radios.Dr. D. M. Vinod Kumar joined at National Institute of Technology Warangal in 1981 as a faculty member. He was Head, Department of Electrical Enginee

ring, during 2007-2009, and Dean (Academic) during 2009-2011. He was Chairman, Institution of Engineers (India) Warangal Local Chapter during 2012-2014. At present, he is a Professor of Electrical Engineering at National Institute of Technology, Warangal. He obtained his B.E. and M.Tech. degrees fro

m Osmania University, Hyderabad, during 1979 and 1981, respectively. He earned his Ph.D. degree from IIT Kanpur in the year 1996. During 2002-2003, he was Post-Doctoral Fellow at Howard University, Washington, D.C., USA. He has published more than 100 papers in international journals and conferences

. He is Fellow of Institution of Engineers (India) Kolkata and the life member of Systems Society of India (SSI). He is the member of Board of Studies of the Department of Electrical Engineering, Osmania University, Hyderabad, and JNTU, Hyderabad, Kakinada, and Anantapur. He delivered expert lecture

s on neural networks and fuzzy logic at various institutions. His areas of interest are power systems operation and control, power system stability and security, neural networks and fuzzy logic applications, flexible AC transmission systems, power system deregulation and restructuring and smart grid

technologies, multi-objective evolutionary algorithm applications, and renewable energy systems.Dr. K. S. Chandragupta Mauryan is working as a Professor in EEE and Assistant Dean R&D, Guru Nanak Institutions Technical Campus, Hyderabad. He has completed Ph.D. in Electrical Engineering from Anna Uni

versity, Chennai, in the year 2015, M.E. in Power Systems Engineering from PSG College of Technology, Coimbatore, in the year 2004, and B.E. in Electrical and Electronics Engineering from Bharathiar University, Coimbatore, in the year 2001. He has also qualified the GATE 2001 Examination in Electric

al and Electronics. He has published more than 30 technical papers in international and national journals. He has published 6 patents and filed 1 patent in Patent Office, India. He has presented more than 25 research papers in international and national conferences. He is the member of professional

societies like IEEE, ISTE, ISRD, IRED, and IAENG. He is having 15 years of teaching and 11 years of research experience. His research interests are power systems optimization, smart grid technologies, soft computing applications, renewable energy sources, and electric vehicle.

具新穎氮硫化鎢界面結構的p型二硫化鎢電晶體: 以第一原理量子傳輸理論進行模擬計算

為了解決Logic gate的問題，作者歐仲鎧 這樣論述：

實驗室所製作的過渡金屬二硫族化合物(含一定濃度缺陷)二維電晶體，由於費米能釘札導致其p型接觸非常稀少；另一方面，電腦計算模擬所對應的上述理想結構(二維材料無缺陷)則可在高功函數金屬顯出為p型接觸，但仍未達到足夠低的電洞蕭特基位障。因此本文提出一種金屬性的超材料硫氮化鎢作為傳統金屬與半導體通道之間的緩衝層。其結構的形成可揣摩是由簡單的metal/WS2側接觸做為出發，我將鄰近介面處一定面積的上排硫原子置換為氮。以第一原理及量子傳輸理論計算電子結構與傳輸電流。我發現在金屬與二硫化鎢之間僅需0.6奈米長的硫氮化鎢緩衝層，便可有效降低通道的電洞蕭特基位障：在以鉑為金屬電極的情形中，硫氮化鎢可使蕭特基

型的Pt/WS2側接觸轉變為歐姆特性，達成以單一二維材料實現互補式金屬氧化物半導體的目標。除了鉑電極，即便我採用低功函數的金屬鋁，在Al/WSN/WS2的結構，計算而得的蕭特基位障仍低至0.12 eV。上述鉑與鋁電極的計算結果表明，氮硫化鎢緩衝層顯著提升了選擇電極金屬的靈活性，令選擇不再受限於高功函數的貴重金屬：如金、鉑和鈀。我亦更進一步量化計算Pt/WSN/WS2在不同閘極電壓下的伏安特性，得出該結構有高達10^8的開關電流比和在汲極電壓50毫伏下231 µA/µm的導通電流(接觸電阻 ≈ 63.8Ω∙μm)。同時為驗證實驗製程時硫氮化鎢的穩定性，我們採用第一原理分子動力學在室溫下分別模擬氮

吸附、單顆氮取代硫和單層氮硫化鎢，發覺皆為穩定結構。