ssd 1t的問題，透過圖書和論文來找解法和答案更準確安心。 我們找到下列免費下載的地點或者是各式教學

鐵電電晶體非揮發性記憶體之變異分析與微縮評估

為了解決ssd 1t的問題，作者劉佑陞 這樣論述：

摘要......iAbstract......ivAcknowledgements......viiContents......ixFigure Captions......xiiTable Captions......xxiiChapter 1 Introduction......11.1. Background......11.2. Phase Nonuniformity and Ferroelectricity in Doped Hafnium Oxide......31.3. Basic Operation of FeFETs with Preisach Model......51.

4. Endurance and Reliability Limitations......61.5. Dissertation Organization......7Chapter 2 Variability Analysis for Ferroelectric FET Nonvolatile Memories Considering Random Ferroelectric-Dielectric Phase Distribution......262.1. Introduction......262.2. Calibration between Models and TCAD......2

72.3. Simulation Methodology: Number and Position Fluctuations......282.4. Discussion on Worst-case MW......292.5. Impact of EOT of IL on MW Distribution......292.6. Impact of Scaled Channel Area on MW Distribution......302.7. Comparison between Voronoi and Square Approaches......322.8. Summary.....

.33Chapter 3 Impact of Trapped-Charge Variations on Scaled Ferroelectric FET Nonvolatile Memories......553.1. Introduction......553.2. Simulation Methodology: Number and Position Fluctuations......563.3. Impact of Trapped Charges on Vth and MW Distributions......573.4. Impact of EOT of IL on MW Dist

ribution......593.5. Impact of Scaled Channel Area on MW Distribution......593.6. Impact of Trapped-Charge Variations under Random FE-DE Phase Distribution......603.7. Summary......62Chapter 4 Improving the Scalability of Ferroelectric FET Nonvolatile Memories with High-k Spacers......794.1. Introdu

ction......794.2. Simulation Methodology......804.3. Impact of High-k Spacers on the Scalability of FeFETs Considering Phase Non-uniformity......814.4. Impact of High-k Spacers on Electric Field across Interfacial Layer......844.5. Design Space Exploration for Scaled FeFET Nonvolatile Memories......

864.6. Impact of the Pr/PS ratio on MW and Design Space......884.7. Possible Concerns with High-k Spacer Design......894.8. Summary......89Chapter 5 Comparison of 2D MoS2 and Si Ferroelectric FET Nonvolatile Memories Considering the Trapped-Charge induced Variability......1175.1. Introduction......1

175.2. Calibration between Post-Process Models and TCAD......1185.3. Better Electrostatic Integrity of the MoS2 FeFET......1195.4. Superior Immunity to Trapped-Charge induced Variability......1205.5. Comparison of Device Scaling on MW Variation......1205.6. Comparison between Classical and Quantum r

esults on MW Variation......1215.7. Random FE-DE Phase Distribution in MoS2 FeFETs......1245.8. Summary......125Chapter 6 Conclusion and Future Work......1476.1. Conclusion......1476.2. Future work......149