sfp的問題，透過圖書和論文來找解法和答案更準確安心。 我們找到下列免費下載的地點或者是各式教學

現代示波器高級應用：測試及使用技巧

為了解決sfp的問題，作者李凱 這樣論述：

示波器是最廣泛使用的電子測量儀器。經過近一個世紀的持續技術革新，現代數字示波器已經是結合了最新材料、芯片、計算機、信號處理技術的復雜測量系統。本書結合筆者近20年實際應用經驗，對現代數字示波器的原理、測量方法、測量技巧、實際案例等做了深入淺出的解讀和分析。本書分為三大部分： 第1~8章介紹現代測量儀器的發展、數字示波器原理、主要指標、測量精度、探頭分類及原理、探頭對測量的影響、觸發條件、數學函數功能等內容； 第9~19章結合實際案例，介紹示波器在信號完整性分析、電源測試、時鍾測試、射頻測試、寬帶信號解調、總線調試、芯片測試中的實際應用案例； 第20~29章側重高速總線的一致性測試，介紹數字總線

，如PCIe 3.0/4.0、SATA、SAS 12G、DDR3/4、10G以太網、CPRI接口、100G背板、100G光模塊、400G以太網/PAM4信號的原理及測試方法。本書可幫助從事高速通信、計算機、航空航天設備的開發和測試人員深入理解及掌握現代數字示波器的使用技能，也可供高校工科電子類的師生做示波器、電路測試方面的教學參考。李凱，畢業於北京理工大學光電工程系，碩士學位，中國電子學會高級會員，曾在國內知名通信公司從事多年數據通信及基站研發工作，對於通信、計算機等行業有深入認知，對信號完整性、嵌入式系統、高速總線、可編程邏輯、時鍾、電源等電路的設計和測試有深刻理解。2006年加入安捷倫公司

電子測量儀器部（現Keysight公司），負責高速測試儀器（如示波器、誤碼儀等）的應用和研究，長期和一線電子工程師有密切接觸。作為高速測試領域的專家，李凱利用業余時間撰寫了大量關於測量原理及方法的文章，並發布在《國外電子測量技術》《電子工程專輯》等專業雜志，同時在EDN China網站（現「面包板」社區）開設有技術博客及微信公眾號「數字科技」。 一、 現代測量儀器技術的發展二、 示波器原理1. 模擬示波器2. 數字存儲示波器3. 混合信號示波器4. 采樣示波器5. 阻抗TDR測試三、 數字示波器的主要指標1. 示波器的帶寬2. 示波器的采樣率3. 示波器的內存深度4. 示波

器的死區時間四、 示波器對測量的影響1. 示波器的頻響方式2. 示波器帶寬對測量的影響3. 示波器的分辨率4. 示波器的直流電壓測量精度5. 示波器的時間測量精度6. 示波器的等效位數7. 示波器的高分辨率模式8. 示波器的顯示模式五、 示波器探頭原理1. 探頭的寄生參數2. 高阻無源探頭3. 無源探頭常用附件4. 低阻無源探頭5. 有源探頭6. 差分有源探頭7. 有源探頭的使用注意事項8. 寬溫度范圍測試探頭9. 電流測量的探頭10. 光探頭六、 探頭對測量的影響1. 探頭前端對測量的影響2. 探頭衰減比對測量的影響3. 探頭的校准方法4. 探頭的負載效應5. 定量測量探頭負載效應的方法七、

使用觸發條件捕獲信號1. 示波器觸發電路原理2. 示波器的觸發模式3. 邊沿觸發4. 碼型觸發5. 脈沖寬度觸發6. 毛刺觸發7. 建立/保持時間觸發8. 跳變時間觸發9. 矮脈沖觸發10. 超時觸發11.連續邊沿觸發12. 窗口觸發13. 視頻觸發14. 序列觸發15. 協議觸發16. 高速串行觸發17. 高級波形搜索八、 示波器的數學函數1. 用加/減函數進行差分和共模測試2. 用Max/Min函數進行峰值保持3. 用乘法運算進行功率測試4. 用XY函數顯示李薩如圖形或星座圖5. 用濾波器函數濾除噪聲6. 用FFT函數進行信號頻譜分析7. 用Gating函數進行信號縮放8. 用Trend

函數測量信號變化趨勢9. 使用MATLAB的自定義函數九、 高速串行信號質量分析1. 顯示差分和共模信號波形2. 通過時鍾恢復測試信號眼圖3. 進行模板測試4. 失效bit定位5. 抖動分析6. 抖動分解7. 通道去嵌入8. 通道嵌入9. 信號均衡10. 均衡器的參數設置11. 預加重的模擬十、 電源完整性測試1. 電源完整性測試的必要性2. 電源完整性仿真分析3. DC?DC電源模塊和PDN阻抗測試4. DC?DC電源模塊反饋環路測試5. 精確電源紋波與開關噪聲測試6. 開關電源功率及效率分析7. 電源系統抗干擾能力測試十一、 電源測試常見案例1. 交流電頻率測量中的李薩如圖形問題2. 電源

紋波的測量結果過大的問題3. 接地不良造成的電源干擾4. 大功率設備開啟時的誤觸發5. 示波器接地對測量的影響十二、 時鍾測試常見案例1. 精確頻率測量的問題2. GPS授時時鍾異常狀態的捕獲3. 光纖傳感器反射信號的頻率測量4. 晶體振盪器頻率測量中的停振問題5. PLL的鎖定時間測量6. 時鍾抖動測量中RJ帶寬的問題7. 時鍾抖動測量精度的問題8. 如何進行微小頻差的測量十三、 示波器能用於射頻信號測試嗎？1. 為什麼射頻信號測試要用示波器2. 現代實時示波器技術的發展3. 現代示波器的射頻性能指標4. 示波器射頻指標總結十四、 射頻測試常用測試案例1. 射頻信號時頻域綜合分析2. 雷達脈

沖的包絡參數測量3. 微波脈沖信號的功率測量精度4. FFT分析的窗函數和柵欄效應5. 雷達參數綜合分析6. 跳頻信號測試7. 多通道測量8. 衛星調制器的時延測量9. 移相器響應時間測試方法10. 雷達模擬機測量中的異常調幅問題11. 功放測試中瞬態過載問題分析12. 復雜電磁環境下的信號濾波13. 毫米波防撞雷達特性分析十五、 寬帶通信信號的解調分析1. I/Q調制簡介2. I/Q調制過程3. 矢量信號解調步驟4. 突發信號的解調5. 矢量解調常見問題6. 超寬帶信號的解調分析十六、 高速數字信號測試中的射頻知識1. 數字信號的帶寬2. 傳輸線對數字信號的影響3. 信號處理技術4. 信號抖

動分析5. 數字信號測試中的射頻知識總結十七、 高速總線測試常見案例1. 衛星通信中偽隨機碼的碼型檢查2. 3D打印機特定時鍾邊沿位置的數據捕獲3. VR設備中遇到的MIPI 信號測試問題4. AR眼鏡USB拔出時的瞬態信號捕獲5. 區分USB總線上好的眼圖和壞的眼圖6. 4K運動相機的HDMI測試問題7. SFP+測試中由於信號邊沿過陡造成的DDPWS測試失敗8. USB 3.1 TypeC接口測試中的信號碼型切換問題十八、 芯片測試常用案例1. 高速Serdes芯片功能和性能測試2. 高速ADC技術的發展趨勢及測試3. 二極管反向恢復時間測試4. 微封裝系統設計及測試的挑戰十九、 其他常見

測試案例1. 如何顯示雙脈沖中第2個脈沖的細節2. 示波器的電壓和幅度測量精度3. 不同寬度的脈沖信號形狀比較4. 超寬帶雷達的脈沖測量5. 通道損壞造成的幅度測量問題6. 對脈沖進行微秒級的精確延時7. 探頭地線造成的信號過沖8. 探頭地線造成的短路9. 阻抗匹配造成的錯誤幅度結果10. 外部和內部50Ω端接的區別11. 低占空比的光脈沖展寬問題12. 如何提高示波器的測量速度13. 計算機遠程讀取示波器的波形數據二十、 大型數據中心的發展趨勢及挑戰二十一、 PCIe 3.0測試方法及PCIe 4.0展望1. PCIe 3.0 簡介2. PCIe 3.0 物理層的變化3. 發送端信號質量測試

4. 接收端容限測試5. 協議分析6. 協議一致性和可靠性測試7. PCIe 4.0標准的進展及展望二十二、 SATA信號和協議測試方法1. SATA 總線簡介2. SATA 發送信號質量測試3. SATA 接收容限測試4. SATA?Express（U.2/M.2）的測試二十三、 SAS 12G總線測試方法1. SAS總線概述2. SAS的測試項目和測試碼型3. SAS發送端信號質量測試4. SAS接收機抖動容限測試5. SAS互連阻抗及回波損耗測試方案二十四、 DDR3/4信號和協議測試1. DDR 簡介2. DDR信號的仿真驗證3. DDR 信號的讀寫分離4. DDR 的信號探測技術5.

DDR 的信號質量分析6. DDR 的協議測試二十五、 10G以太網簡介及信號測試方法1. 以太網技術簡介2. 10GBASE?T/MGBase?T/NBase?T的測試3. XAUI和10GBASE?CX4測試方法4. SFP+/10GBase?KR接口及測試方法二十六、 10G CPRI接口時延抖動測試方法1. 4G基站組網方式的變化2. CPRI接口時延抖動的測試3. 測試組網4. 時延測試步驟5. 抖動測試步驟6. 測試結果分析7. 測試方案優缺點分析二十七、 100G背板性能的驗證1. 高速背板的演進2. 100G背板的測試項目3. 背板的插入損耗、回波損耗、阻抗、串擾的測試4.

背板傳輸眼圖和誤碼率測試5. 發送端信號質量的測試6. 100G背板測試總結二十八、 100G光模塊接口測試方法1. CEI測試背景和需求2. CEI 28G VSR測試點及測試夾具要求3. CEI 28G VSR輸出端信號質量測試原理4. CEI 28G VSR輸出端信號質量測試方法5. CEI 28G VSR輸入端壓力容限測試原理6. CEI 28G VSR接收端壓力容限測試方法7. 100G光收發模塊的測試挑戰8. 100G光模塊信號質量及並行眼圖測試9. 100G光模塊壓力眼及抖動容限測試二十九、 400G以太網 PAM 4信號簡介及測試方法1. 什麼是PAM 4信號？2. PAM 4

技術的挑戰3. PAM 4信號的測試碼型4. PAM 4發射機電氣參數測試5. PAM 4的接收機容限及誤碼率測試

sfp進入發燒排行的影片

計算流體力學在機組除役間用過核子燃料熱流分析之應用

為了解決sfp的問題，作者王文豫 這樣論述：

基於Cadence的信號和電源完整性設計與分析

為了解決sfp的問題，作者周潤景，王洪艷 這樣論述：

本書主要介紹信號完整性和電源完整性的基礎理論和設計方法，結合實例詳細介紹了如何在Cadence Allegro Sigrity仿真平台完成相關仿真並分析結果。同時，在常見的數字信號高速電路設計方面，本書詳細介紹了高速並行總線DDR3和高速串行總線PCIE、SFP+傳輸的特點，以及運用Cadence Allegro Sigrity仿真平台的分析流程和方法。本書特點是理論和實例相結合，並且基於Cadence Allegro Sigrity的ASI16.64以及Sigrity2015仿真平台，使讀者可以在軟件的實際操作過程中理解各方面的高速電路設計理念，同時熟悉仿真工具和分析流程，發現相關的問題並運

用類似的設計、仿真方法去解決。周潤景教授，中國電子學會高級會員，IEEE/EMBS會員，國家自然科學基金項目”高速數字系統的信號與電源完整性聯合設計與優化」等多項國家級、省部級科研項目負責人，主要從事模式識別與智能系統、控制工程的研究與教學工作，具有豐富的教學與科研經驗。 第1章 信號完整性1.1 信號完整性的要求以及問題的產生1.1.1 信號完整性的要求1.1.2 信號完整性問題產生的原因1.2 信號完整性問題的分類1.2.1 反射1.2.2 串擾1.2.3 軌道塌陷1.2.4 電磁干擾1.3 傳輸線基礎理論1.3.1 傳輸線1.3.2 特性阻抗的計算1.3.3 傳輸線的

分類1.3.4 傳輸線效應1.3.5 避免傳輸線效應的方法1.4 端接電阻匹配方式1.4.1 並聯終端匹配1.4.2 串聯終端匹配1.4.3 戴維南終端匹配1.4.4 AC終端匹配1.4.5 肖特基二極管終端匹配1.4.6 多負載的端接1.5 仿真模型1.5.1 IBIS模型1.5.2 驗證IBIS模型1.6 S參數1.6.1 集總電路和分布電路1.6.2 S參數的作用、由來和含義1.6.3 S參數在電路仿真中的應用1.6.4 S參數的優缺點1.7 電磁場求解方法1.7.1 2D求解器1.7.2 2.5D求解器1.7.3 3D求解器1.8 信號完整性仿真分析1.8.1 反射理論及其仿真分析1.

8.2 串擾理論及其仿真分析1.8.3 時序分析1.9 本章小結第2章 電源完整性2.1 電源完整性的重要性2.2 技術趨勢2.3 電源分布系統（PDS）2.3.1 PDS設計的關鍵2.3.2 目標阻抗2.3.3 電壓調節模塊（VRM）2.3.4 去耦電容器2.3.5 電源平面2.4 電源系統的噪聲來源2.4.1 開關噪聲2.4.2 共模噪聲2.4.3 電源噪聲2.5 Cadence PI設計方法與步驟2.6 單節點仿真2.6.1 設計目標2.6.2 創建新PCB文件2.6.3 啟動電源完整性設置向導2.6.4 導入PCB參數2.6.5 設置仿真參數2.6.6 擺放電壓調節模塊2.6.7 選擇

電容器滿足目標阻抗2.7 多節點仿真2.7.1 學習目標2.7.2 打開PCB文件2.7.3 初始多節點分析2.7.4 去耦電容器布局2.7.5 多節點仿真和分析2.8 直流分析 (DC Analyze)2.9 交流分析(AC Analysis)2.10 諧振分析2.10.1 串聯諧振2.10.2 並聯諧振2.11 PDS阻抗分析2.12 本章小結第3章 高速時鍾系統設計3.1 共同時鍾系統3.1.1 共同時鍾數據建立時序分析3.1.2 共同時鍾數據保持時序分析3.2 源同步時鍾系統3.2.1 源同步時鍾數據建立時序分析3.2.2 源同步時鍾數據保持時序分析3.3 DDR3時序分析3.3.1

DDR3時序指標3.3.2 Cadence分析3.3.3 Speed 2000分析3.3.4 兩種仿真流程的分析比較3.3.5 實際測試3.4 本章小結第4章 DDR3並行總線仿真4.1 高速DDRX總線概述4.1.1 DDR發展4.1.2 Bank和Rank4.1.3 接口電平4.1.4 ODT4.1.5 Slew Rate Derating4.1.6 Write Leveling4.1.7 DDR3的新功能4.2 開發板簡介4.3 板載 DDR3的特點4.4 Cadence仿真4.4.1 仿真前的准備工作4.4.2 數據總線的仿真分析4.4.3 數據選通信號的仿真分析4.4.4 地址總線的

仿真分析4.4.5 小結4.5 布線后仿真4.5.1 DDR3參數提取4.5.2 DDR3信號完整性仿真4.5.3 DDR3電源完整性仿真4.5.4 小結4.6 DDR3 SSN分析4.6.1 使能DDR Simulation4.6.2 設置 Mesh4.6.3 設置 Bus Groups4.6.4 設置 Controller Model4.6.5 設置 Memory Model4.6.6 設置 Write仿真選項4.6.7 設置 Read仿真選項4.6.8 生成報告4.6.9 小結4.7 DDR3並行總線的布線規范總結4.8 本章小結第5章 PCIE串行總線仿真5.1 常見高速串行總線標准一

覽5.2 串行總線結構的基本要素5.3 PCIE仿真5.3.1 板載PCIE簡介5.3.2 PCIE參數提取5.3.3 PCIE信號完整性仿真5.3.4 PCIE電源完整性仿真5.4 PCIE的仿真、實測對比5.5 本章總結第6章 SFP+串行總線仿真6.1 SFP+簡介6.2 差分通道建模6.2.1 提取SFP+無源通道 6.2.2 生成3D仿真端口 6.2.3 差分對的3DFEM仿真6.3 通道仿真 6.4 SFP+規范仿真6.5 仿真與實測對比6.6 電源完整性仿真6.6.1 SFP+電源介紹6.6.2 直流壓降分析6.6.3 平面諧振分析6.7 本章小結第7章 PCB的板級電熱耦合分析

7.1 電熱耦合概述7.1.1 電熱耦合研究背景與意義7.1.2 電熱耦合研究現狀7.2 熱路基礎理論7.2.1 傳熱學基本原理7.2.2 熱路的熱阻、熱容提取7.2.3 熱路與電路的等效7.2.4 邊界條件的熱路建模7.3 電熱耦合方法7.3.1 電與熱的關系7.3.2 電熱分布方程求解7.4 電熱耦合分析7.4.1 電熱耦合分析流程7.4.2 實驗分析設計7.4.3 實驗步驟7.5 實驗結果分析7.5.1 熱路對電路的影響7.5.2 電路對熱路的影響7.6 本章小結參考文獻

基於石墨烯及生物碳基材料的可撓式電晶體應用與能量攫取

為了解決sfp的問題，作者Mamina Sahoo 這樣論述：

Table of ContentsAbstract.......................................................................................................iFigure Captions........................................................................................xiTable Captions...................................................

....................................xxiChapter 1: Introduction1.1 Flexible electronics................................................................................11.2 Graphene the magical material ………………………….……….......21.2.1 Synthesis of graphene…………………………….….…...21.2.1.1 Mechanical exfoliati

on of graphene………………...……21.2.1.2 Epitaxial growth on Sic substrate………………….…..31.2.1.3 Chemical vapor deposition (CVD) method………….…..41.2.2 Graphene transfer…………………………………………....41.3 Application of graphene based Electronics……………………….......51.3.1 Graphene based flexible transparent electrode

……………….61.3.2 Top gated Graphene field effect transistor…………………….71.4 Challenges of flexible graphene based field effect transistors.……….91.5 Energy harvesting devices for flexible electronics………….........….91.6 Solar cell…………………………………………………………...101.6.1 Device architecture…………………………………………101.

6.2 Issues and Challenges of Perovskite solar cells………...121.7 Triboelectric nanogenerator (TENG)………………………………121.7.1 Working mode of TENG………………………………….141.8 Applications of TENG………………………………………………151.8.1 Applications of graphene based TENG…………………....151.8.2 Applications of bio-waste material ba

sed TENG………….171.9 Key challenges of triboelectric nanogenerator…………………....…191.10 Objective and scope of this study………………………………....19Chapter 2: Flexible graphene field effect transistor with fluorinated graphene as gate dielectric2.1 Introduction………………………………………………………....212.2 Material preparation a

nd Device fabrication………………. 232.2.1CVD Growth of Graphene on Copper Foil………………….232.2.2 Transfer of graphene over PET substrate……………...........252.2.3 Fabrication of fluorinated graphene ……………...........252.2.4 F-GFETs with FG as gate dielectric device fabrication……262.2.5 Material and electrical C

haracterization …………………272.3 Results and discussion…………………………………………….282.3.1 Material characterization of PG and FG……………...…...….282.3.2 Electrical characterization of F-GFET with FG as dielectrics..332.3.3 Mechanical stability test of F-GFET with FG as dielectrics ….362.4 Summary…………………………………………………

………....40Chapter 3: Robust sandwiched fluorinated graphene for highly reliable flexible electronics3.1 Introduction………………………………………………………….423.2 Material preparation and Device fabrication ………………….........443.2.1 CVD Growth of Graphene on Copper Foil…………………...443.2.2 Graphene fluorination …...…….…………

…………..............443.2.3 F-GFETs with sandwiched FG device fabrication....................443.2.4 Material and electrical Characterization…..............................453.3 Results and discussion ……………………………………...............453.3.1 Material characterization of sandwiched…………………….453.3.2 Electric

al characterization of F-GFET with sandwiched FG....473.3.3 Mechanical stability test of F-GFET with sandwiched FG…503.3.4 Strain transfer mechanism of sandwiched FG………………513.4 Summary…………………………………………………………....53Chapter 4: Functionalized fluorinated graphene as a novel hole transporting layer for ef

ficient inverted perovskite solar cells4.1 Introduction………………………………………………………….544.2 Material preparation and Device fabrication......................................564.2.1 Materials ………………………...…………………………564.2.2 CVD-Graphene growth ……………………………...…...564.2.3 Graphene fluorination …………………………………….564.

2.4 Transfer of fluorinated graphene…………………………...574.2.5 Device fabrication …………………………………….….574.2.6 Material and electrical Characterization …….....................584.3 Results and discussion …………………………………………….594.3.1 Surface electronic and optical properties of FGr……….….594.3.2 Characterization o

f FGr and perovskite surface ……….…644.3.3 Electrical performance of PSC………………….…….…...694.3.4 Electrical performance of Flexible PSC……………………724.4 Summary…………………………………………………………...78Chapter 5: Flexible layered-graphene charge modulation for highly stable triboelectric nanogenerator5.1 Introduction…………

…………………………………………....795.2 Experimental Section……………………………………………….825.2.1 Large-area graphene growth ……………………………….825.2.2 Fabrication of Al2O3 as the CTL …………………………...825.2.3 Fabrication of a Gr-TENG with Al2O3 as the CTL………825.2.4 Material characterization and electrical measurements…….835.3 Results

and discussion.…………………………………...…………845.3.1 Material Characterization of Graphene Layers/Al2O3……845.3.2 Working Mechanism of Gr-TENG with Al2O3 as CTL…915.3.3 Electrical Characterization of Gr-TENG with Al2O3 CTL…945.3.4 Applications of the Gr-TENG with Al2O3 as CTL……….1015.4 Summary…………………………………………

……………….103Chapter 6: Eco-friendly Spent coffee ground bio-TENG for high performance flexible energy harvester6.1 Introduction…………………………………………………….......1046.2 Experimental Section…………………………………………….1086.2.1 Material Preparation …………………………………….1086.2.2 Fabrication of SCG powder based TENG………………...1086

.2.3 Fabrication of SCG thin-film based TENG ………………1096.2.4 Material characterization and electrical measurements….1106.3 Results and discussion.…………………………………...………1116.3.1 Material Characterization of SCG powder and thin film….1116.3.2 Working Mechanism of SCG-TENG……………………...1186.3.3 Electrical Cha

racterization of SCG-TENG……………….1226.3.4 Applications of the SCG thin-film based TENG………….1326.4 Summary………………………………………………………….134Chapter 7: Conclusions and future perspectives7.1 Conclusion………………………………………………………....1357.2 Future work …………………………….………………………….1377.2.1 Overview of flexible fluorinated g

raphene TENG..............1377.2.1.1 Initial results………………………………….…1387.2.2.1.1 Fabrication of FG-TENG………………1387.2.2.1.2 Working principle of FG-TENG……….1397.2.2.1.3 Electrical output of FG-TENG.………...140References…………………………………………………………….142Appendix A: List of publications………………….……………..........177A

ppendix B: Fabrication process of GFETs with fluorinated graphene (FG) as gate dielectric……........……………………………………….179Appendix C: Fabrication process of GFETs with sandwiched FG…....180Appendix D: Fabrication process of inverted perovskite solar cell with FGr as HTL…………………………………………………………….181Appendi

x E: Fabrication of a Gr-TENG with Al2O3 as the CTL…….182Appendix F: Fabrication of SCG based triboelectric nanogenerator….183Figure captionsFigure 1-1 Exfoliated graphene on SiO2/Si wafer……………………….3Figure 1-2 Epitaxial graphene growth on SiC substrate………………....3Figure 1-3 Growth mechanism of graphe

ne on Cu foil by CVD ……......4Figure 1-4 Wet transfer process of CVD grown graphene…………...….5Figure 1-5 RGO/PET based electrodes as a flexible touch screen.……....6Figure 1-6 Graphene based (a) touch panel (b) touch-screen phone…….7Figure 1-7 Flexible graphene transistors (a) (Top) Optical photograph

of an array of flexible, self-aligned GFETs on PET. (Bottom) The corresponding schematic shows a device layout. (b) Schematic cross-sectional and top views of top-gated graphene flake–based gigahertz transistors. (Left) AFM image of a graphene flake. (Right) Photograph of flexible graphene devices

fabricated on a PI substrate. (c) Cross-sectional schematic of flexible GFETs fabricated using a self-aligned process……8Figure 1-8 The magnitude of power needed for meet certain operation depending critically on the scale and applications………………………10Figure 1-9 Schematic diagrams of PSC in the (a) n-i

-p mesoscopic, (b) n-i-p planar, (c) p-i-n planar, and (d) p-i-n mesoscopic structures………...12Figure 1-10 Schematic illustration of the first TENG...………………...13Figure 1-11 Working modes of the TENG. (a) The vertical contact-separation mode. (b) The lateral sliding mode. (c) The single-electrode mode

. (d) The free-standing mode ………………………………...……14Figure 1-12 Schematic illustration of (a) device fabrication of graphene-based TENGs (b) graphene/EVA/PET-based triboelectric nanogenerators (c) device fabrication of stretchable CG based TENG with electrical output performance……………………………………………………...17

Figure 1-13 Schematic illustration and output performance of bio-waste material based TENG (a) Rice-husk (b) Tea leaves (c) Sun flower powder (SFP) (d) Wheat stalk based TENG………….…………………………18Figure 2-1 Graphene synthesis by LPCVD method……….…………...24Figure 2-2 Schematic diagram of (a) preparation pro

cess of 1L-FG/copper foil (b) Layer by layer assembly method was used for fabricating three-layer graphene over copper foil and then CF4 plasma treatment from top side to form 3L-FG/copper foil…………………….26Figure 2-3 Schematic illustration of fabrication process of F-GFET with FG as gate dielectric ……

……………………………………………….27Figure 2-4 (a) Raman spectra of PG, 1L-FG and 3L-FG after 30 min of CF4 plasma treatment over copper foil. (b) Peak intensities ratio ID/IG and optical transmittance of PG, 1L-FG and 3L-FG. Inset: image of PG and 1L-FG film over PET substrate. (c) Typical Raman spectra of PG, 1L

-FG and 3L-FG on PET substrate. (d) Optical transmittance of PG, 1L-FG and 3L-FG film over PET substrate. The inset shows the optical image of GFETs with FG as gate dielectrics on PET ……….…………30Figure 2-5 XPS analysis result of (a) PG (b) 1L-FG (c) 3L-FG where the C1s core level and several carbon f

luorine components are labeled. The inset shows the fluorine peak (F 1s) at 688.5 eV……………………….32Figure 2-6 (a) Water contact angle of PG, 1L-FG and 3L-FG over PET substrate. (b) The relationship between water contact angle of PG, 1L-FG and 3L-FG and surface-roughness………………………………………33Figure 2-7 (a) I

d vs. Vd of w/o-FG, w/1L-FG and w/3L-FG samples after 30 min of CF4 plasma (b) Id vs. Vg of w/o-FG, w/1L-FG and w/3L-FG samples at a fixed value of drain to source voltage, Vds of 0.5 V (c) Gate capacitance of w/o-FG, w/1L-FG and w/3L-FG samples (d) Gate leakage current of w/o-FG (naturally formed A

l2OX as gate dielectric), w/1L-FG and w/3L-FG samples ……………………………...…………...……...34Figure 2-8 (a) Schematic illustration of bending measurement setup at different bending radius. (i) Device measurement at (i) flat condition (ii) bending radius of 10 mm (iii) 8 mm (iv) 6 mm. Inset shows the photograph

of measurement setup. Change in (b) carrier mobility (c) ION of w/o-FG, w/1L-FG and w/3L-FG samples as a function of bending radius. The symbol ∞ represents the flat condition. Change in (d) carrier mobility (e) ION of w/o-FG, w/1L-FG and w/3L-FG samples as a function of bending cycles (Strain = 1.

56%)…………………………………….38Figure 3-1 Schematic illustration of the flexible top gate graphene field effect transistor with sandwich fluorinated graphene (FG as gate dielectric and substrate passivation layer) ……………………………...…………44Figure 3-2 Raman spectra of (a) PG/PET and PG/FG/PET substrate (b) sandwiche

d FG (FG/PG/FG/PET). Inset showing the optical transmittance of sandwiched FG. (c) HRTEM image for 1L-FG.……………….….…46Figure 3-3 (a) Id vs. Vd of FG/PG/FG device at variable vg (−2 to 2 V). (b) Id vs. Vg of FG/PG/FG. (c) Gate capacitance of FG/PG/FG ….…….48Figure 3-4 Raman spectra of devices under be

nding (a) PG/PET (Inset shows the 2D peak) (b) PG/FG/PET (inset shows the 2D peak) …….…49Figure 3-5 (a) Change in Mobility (b) change in ION of PG/PET and PG/FG/PET as a function of bending radius between bending radii of ∞ to 1.6 mm in tensile mode (c) Change in Mobility (d) Change in ION of PG/PET

and PG/FG/PET as a function of bending cycles. Inset of (c) shows the photograph of F-GFETs with sandwich FG on the PET substrate (e) change in resistance of w/1L-FG, 1L-FG/PG/1L-FG samples as a function of bending radius ………………………...……………….50Figure 3-6 Schematic evolution of proposed strain transf

er mechanism through PG/PET and PG/FG/PET. The inset of PG/PET sample shows the generation of sliding charge due to interfacial sliding between PG and PET ………………………………………………………………….….52Figure 4-1 FGr fabrication and transfer process …………….………....57Figure 4-2 (a) Raman analysis of pristine graphene a

nd the FGr samples after 5, 10, 20, and 30 min of CF4 plasma treatment over Cu foil (b) Raman intensity ratios (I2D/IG and ID/IG) of fluorinated graphene, with respect to the exposure time ……………………………………………60Figure 4-3 SEM images of (a) ITO, (b) ITO/1L-FGr, (c) ITO/2L-FGr, and (d) ITO/3L-FGr …………………

………………………………….61Figure 4-4 XPS analysis of FGr with (a) 5 min (b) 10 min and (c) 20 min of CF4 plasma treatment on the Cu foil (d) The fluorine peak (F1s) of FGr (f) The correlation of the carbon-to-fluorine fraction (C/F) with exposure time and the corresponding carrier concentrations …………….………62Fi

gure 4-5 Tauc plots and UV–Vis absorption spectra of FGr films with CF4 plasma treatment for (a) 5, (b) 10, and (c) 20 min ….………......….63Figure 4-6 WCAs on PEDOT: PSS and 1L, 2L, and 3L FGr samples ...64Figure 4-7 (a) Mechanism of large grain growth of perovskite on a non-wetting surface (b) Top-vi

ew and cross-sectional surface morphologies of perovskites on various HTLs ………………………………...…………65Figure 4-8 XRD of perovskite films on various HTL substrates ….…...66Figure 4-9 UPS spectra of various numbers of FGr layers on ITO: (a) cut-off and (b) valance band spectra …………………………………….….67Figure 4-10

Energy band diagrams of PSCs with (a) PEDOT: PSS, (b) 1L-FGr, (c) 2L-FGr, and (d) 3L-FGr as HTL …………………….…….68Figure 4-11 (a) Steady state PL spectra of PEDOT: PSS/perovskite and FGr/perovskite films. (b) TRPL spectral decay of PEDOT: PSS/perovskite and FGr/perovskite films………………………….……69Figure 4-1

2 (a) Schematic representation of a PSC having an inverted device configuration. (b) Cross-sectional HRTEM image of the ITO/ FGr–perovskite interface………………………………………...………70Figure 4-13 Photovoltaic parameters of PSCs incorporating various HTL substrates: (a) PCE (%), (b) Voc (V), (c) Jsc (mA/cm2), an

d (d) FF (%)....71Figure 4-14 Normalized PCEs of target and control PSCs incorporating various HTL substrates, measured in a N2-filled glove box. (a) Thermal stability at 60 °C (b) Light soaking effect under 1 Sun (c) Stability after several days …………………………………………………………….72Figure 4-15 (a) Schematic r

epresentation of the structure of a flexible PSC on a PET substrate (b) J–V curves of control and target flexible PSCs, measured under both forward and reverse biases. (c) Average PCE of flexible PSCs incorporating PEDOT: PSS and FGr HTLs……….…73Figure 4-16 (a) Normalized averaged PCEs of the flexibl

e PSCs after bending for 10 cycles at various bending radii. (b) Normalized averaged PCEs of the flexible PSCs plotted with respect to the number of bending cycles at a radius of 6 mm ………………………………………………75Figure 4-17 Photovoltaics parameters of flexible PSCs with various HTL substrates: (a) JSC (mA/c

m2), (b) Voc (V), and (c) FF (%) ……………....75Figure 4-18 XRD patterns of perovskite films on PET/ITO/FGr, recorded before and after bending 500 times …………………………………….76Figure 4-19 SEM images of (a) perovskite films/FGr/ITO/PET before bending (b) after bending 500 times (c) perovskite films/PEDOT: PSS/

ITO/PET before bending (d) after bending 500 times ……………….…77Figure 4-20 PL spectra of perovskite films on PET/ITO/FGr, recorded before and after various bending cycles …………………………….…78Figure 5-1 Schematic illustration showing the fabrication process of a flexible Gr-TENG with Al2O3 as the CTL ……………

………………...83Figure 5-2 The Raman spectra of (a) graphene/Al-foil/PET and (b) graphene/Al2O3/Al-foil/PET. The I2D/IG of graphene layers (1L, 3L and 5L) over (c) Al-foil/PET substrate (d) Al2O3/Al-foil/PET substrate …...85Figure 5-3 XRD patterns of (a) graphene/Al-foil/PET and (b) graphene/Al2O3/Al-foi

l/PET ……………………………………………86Figure 5-4 FESEM image of the graphene surface on (a) Al-foil/PET and (b) Al2O3/Al-foil/PET. EDS analysis of (c) graphene/Al-foil/PET and (d) graphene/Al2O3/Al-foil/PET (e) EDS elemental mapping of the graphene/Al2O3/Al-foil/PET presenting C K series, O K series and Al K ser

ies …………………………………………………………….………87Figure 5-5 3D AFM images of (a) 1L-Gr (b) 3L-Gr (c) 5L-Gr on Al foil (d) 1L-Gr (e) 3L-Gr (f) 5L-Gr on Al2O3/Al foil………………….….….89Figure 5-6 Work function of graphene layers on the (a) Al-foil (b) Al2O3/Al-foil substrate by KPFM. Inset showing the surface potential of

graphene layers (1L, 3L and 5L) over Al-foil and Al2O3 substrate (c) energy band diagrams for 1L-Gr, 3L-Gr and 5L-Gr over Al2O3 ……....90Figure 5-7 Schematic illustration of Electronic energy levels of graphene samples and AFM tip without and with electrical contact for three cases: (i) tip and the

1L-Gr (ii) tip and the 3L-Gr and (iii) tip and the 5L-Gr over Al2O3/Al foil/PET……………………………………….…...…………91Figure 5-8 Working mechanism of Gr-TENG with Al2O3 ….….…...…93Figure 5-9 a) ISC and (b) VOC of 1L-, 3L- and 5L-Gr-TENGs without Al2O3 CTL (c) Sheet resistance of graphene as a function of number

of layers ………………………………...…...…………………………….95Figure 5-10 Electrical output of the Gr-TENG with Al2O3 CTL: (a) ISC and (b) VOC of 1L-, 3L- and 5L-Gr. Magnification of the (c) ISC and (d) VOC of the 3L-Gr-TENG with Al2O3 as the CTL. Average mean (e) ISC and (f) VOC generated by pristine Gr-TENGs (1L, 3L

and 5L) and Gr-TENGs (1L, 3L and 5L) with Al2O3 CTL. Error bars indicate standard deviations for 4 sets of data points ……………...…………….….…......96Figure 5-11 (a) CV of Al/Al2O3/3L-Gr/Al at 100 kHz and 1 MHz (b) CV hysteresis of 3L-Gr-TENG with Al2O3 as CTL with different sweeping voltages (c) Surface

charge density of graphene (1L, 3L and 5L)-based TENG with and without Al2O3 as CTL ………………………………...98Figure 5-12 Circuit diagram of output (a) VOC and (b) ISC measurement of 3L-Gr TENG with Al2O3 CTL as a function of different resistors as external loads. Variation in VOC and ISC w.r.t different re

sistors as external loads of (c) 3L-Gr TENG with Al2O3 CTL (d) 3L-Gr TENG without Al2O3 CTL. Relationship between electrical output power and external loading resistance (e) 3L-Gr TENG with Al2O3 CTL (f) 3L-Gr TENG without Al2O3 CTL…………………………………….………………...99Figure 5-13 (a)Electrical stability and du

rability of the 3L-Gr TENG with Al2O3 (b) Schematic illustrations showing the charge-trapping mechanism of 3L-Gr-TENG without and with Al2O3 charge trapping layer ………101Figure 5-14 (a) Photograph showing 20 LEDs being powered (b) Circuit diagram of bridge rectifier (c) Charging curves of capacitors

with various capacitances (d) Photograph of powering a timer …….………………102Figure 6-1 The schematic diagram of the fabrication process for SCG powder based TENG ……………………………………………….….108Figure 6-2 The schematic diagram of the fabrication process for SCG thin-film based TENG via thermal evaporation meth

od ………………109Figure 6-3 FESEM image of (a) SCG powder (inset image illustrates the high magnification of SCG powder) (b) SCG thin-film/Al foil/PET (inset image illustrates the high magnification of SCG thin-film). EDS of the (c) SCG powder (d) SCG thin-film/Al foil/PET…………………………. 112Figure 6-4 Raman

spectra analysis (a) pristine SCG powder (b) SCG thin-film/Al foil/PET. XRD patterns of (c) SCG powder (d) SCG thin film with different thickness ……………………………………… ……….115Figure 6-5 FTIR analysis of the (a) pristine SCG powder sample (b) SCG thin film………………………………………………………………...116Figure 6-6 3D AFM ima

ge of SCG thin-film with various thickness (a) 50 nm (b)100 nm and (c) 200 nm……………………………………...117Figure 6-7 Schematic illustration of working principle of SCG thin-film based TENG …………………………………………………………...119Figure 6-8 Finite element simulation of the generated voltage difference for SCG thin-film b

ased TENG based on the contact and separation between SCG thin film and PTFE …………….……………………….120Figure 6-9 (a) The setup for electrical property testing, which including a Keithley 6514 system electrometer and linear motor. Electrical output (b) ISC (c) VOC of TENGs based on different friction pairs

for checking the triboelectric polarity of SCG…………………………………………...123Figure 6-10 Electrical measurement of (a) ISC and (b) VOC of the SCG thin-film based TENG. Mean value of (d) ISC (e) VOC and (f) Output power density of the pristine SCG powder and thermal deposited SCG thin-film based TENG. ...………

………………………………………125Figure 6-11 (a) Schematic illustration of KPFM for measuring the work function. (b) Surface potential images of SCG thin film with various thickness (50 nm, 100 nm and 200 nm). (c) Surface potential and (d) Work function vs SCG thin film with various thickness (50 nm, 100 nm and 20

0 nm).………….……………………………………………….128Figure 6-12 (a) Isc and (b) Voc of SCG thin film based TENG under different contact frequencies (c) Isc and (d) Voc of SCG thin film based TENG under different separation distance…………………………….129Figure 6-13 Electrical response (a) ISC (b) VOC of pristine SCG powder an

d (c) ISC (d) VOC of SCG thin-film based TENG with respect to different relative humidity (35-85% RH) …………………………….131Figure 6-14 Electrical stability and durability test of the output performance of (a) pristine SCG powder based TENG (b) SCG thin-film based TENG……………………………………………………………132Figure 6-15

Applications of the SCG thin film based TENG as a power supply: (a) Circuit diagram of the bridge-rectifier for charging a capacitor (b) Charging curves of capacitors with various capacitances (0.1, 2.2 and 3.3 µF) (c) Photograph of powering a timer…………………...………133Figure 7-1 Schematic illustration o

f FG based TENG…….….……….139Figure 7-2 Working mechanism of FG based TENG…………………140Figure 7-3 Electrical output of FG-TENG: (a) Isc and (b) Voc …….….141Table captionsTable 2-1 Comparison of flexible G-FETs on/off ratio of our work with other’s work…………………………………………………...………...40Table 3-1 Summary of th

e electrical and mechanical performance of flexible w/o-FG, w/ 1L-FG, w/3L-FG and sandwich FG (FG/PG/FG) samples......................................................................................................52Table 3.2: Comparison of the electrical and mechanical performance of sandwich FG ba

sed F-GFET with previous F-GFET with different gate dielectrics……………………………………………………….………53Table 4-1 Best photovoltaic performance from control and target devices prepared on rigid and flexible substrates……………………………......74Table 5-1 EDS elemental analysis of graphene over Al-foil/PET and Al2O3/Al-foi

l/PET ………………………………………………………88Table 5-2 Comparison of electrical output performance of Gr-TENGs with and without Al2O3 CTL samples used in this study………………103Table 6-1 EDS elemental analysis of SCG-Powder and SCG thin film /Al foil/PET………………………………………………………………...113Table 6-2 Comparison of electrical o

utput performance of SCG-TENGs samples used in this study……………………………………………...126