Turn off的問題，透過圖書和論文來找解法和答案更準確安心。 我們找到下列免費下載的地點或者是各式教學

Shonen Note: Boy Soprano 2

為了解決Turn off的問題，作者Kamatani, Yuhki 這樣論述：

A poignant coming-of-age series that’s moving and musical from the creator of Our Dreams at Dusk: Shimanami Tasogare! Yutaka is a boy treasured by his choir for his beautiful, soprano voice. But what will he do when the inevitable arrives, and his voice starts to deepen? Perfect for fans of Kagek

i Shojo!!, Keep Your Hands Off Eizouken, Blue Period, and Boys Run the Riot.Now that Yutaka has officially decided to join the city opera, he’s cast in a leading role in the ghost story The Turn of the Screw. Meanwhile, school choir president Betsuyaku struggles to prove that he and his choir are ca

pable of winning the gold prize in the NHK All-School Choir Competition. But can he bring the choir together to achieve greatness, or will he alienate all of its members?

Turn off進入發燒排行的影片

具有綠光雷射結晶多晶矽通道之T型閘薄膜電晶體射頻特性分析

為了解決Turn off的問題，作者葉宇婕 這樣論述：

本論文中，我們研究具有T型閘極、空氣邊襯及矽化閘/源/汲極多晶矽薄膜電晶體的射頻特性。為了提升多晶矽薄膜的晶粒尺寸，我們使用綠光奈秒雷射來製備厚度為50 nm與100 nm的多晶矽薄膜。結果顯示厚度為100 nm的薄膜能得到等效尺寸大於1 μm的晶粒大小，遠優於50 nm厚的多晶矽薄膜。我們於元件製作時採用了新穎的T型閘極技術，不僅降低元件的閘極電阻，也使電晶體具有比微影技術解析極限更小的閘極線寬，使轉導得以大幅提升。我們也分別利用高溫的快速熱退火及低溫的微波退火來活化源汲極雜質。在通道厚度為100 nm並以快速熱退火進行源汲極活化的多晶矽薄膜電晶體中，對最小通道長度達124 nm之元件，截

止頻率可達59.7 GHz，最大震盪頻率亦可達34 GHz。具有相同通道厚度並以微波退火來活化雜質的電晶體中，當通道長度微縮至102 nm，元件的截止頻率更高達63.6 GHz，最大震盪頻率亦可達29.7 GHz。相較過往文獻報導的多晶矽薄膜元件，我們以微波活化源汲極的薄膜電晶體達到了最高的截止頻率。

Julia and the Triple C

為了解決Turn off的問題，作者Gnosspelius, Staffan 這樣論述：

Join the Triple C, the Children’s Childish Club, and be as childish as you like! Julia’s bad day takes a turn in this delightful debut picture book that shows the joy that can come from simply being a child.Julia has had a terrible day and her uncle is trying to cheer her up after school. He does th

is by introducing her to the Triple C, the Childish Children’s Club. The Club encourages people to slow down and enjoy certain things that are easy to neglect. Like walking at your own pace even if everybody else is rushing past, smiling at strangers, jumping in puddles, collecting conkers, and, esp

ecially, asking ’Are we there yet?’ as many times as you like. Or simply by imagining silly or preposterous or lovely things. Staffan Gnosspelius’s delightful, sometimes hilarious, and utterly unique illustrations are full of emotion and the perfect complement to this story of making a bad day bette

r. Julia and the Triple C will inspire young readers in simple and unexpected ways. Staffan Gnosspelius was born and raised in Sweden, but now lives and works in London where he likes to ride around on a bicycle. He studied at Edinburgh College of Art and at Chelsea College of Art and Design. Staf

fan says, Drawing is at the core of what I do. I draw for pleasure. I doodle when I don’t know what to draw. I draw when things are hard. Then the act of drawing is like a release valve to take the pressure off. Drawing and creating artwork is a way for me to digest the world around me and the world

inside me. When he’s not drawing or riding his bicycle, he also like to grow and cook and eat food.

以第一原理量子傳輸理論研究在介面處有取代硫處理之二硫化鎢電晶體

為了解決Turn off的問題，作者陳竑任 這樣論述：

矽基互補式金氧半場效電晶體的持續微縮遭遇短通道效應的限制，此限制從過去到未來的發展導致了一連串的問題。包含汲極引發位障降低(Drain-induced Barrier Lowering, DIBL)、閘極引發漏電(Gate-induced Drain Leakage, GIDL)、擊穿(Punch-Through)、載子遷移率下降等等。在各種可能使電晶體微縮至1nm節點以下的新穎通道材料中，具原子尺度的二維材料不僅直觀上可克服短通道效應，使電晶體更進一步微縮，同時仍保持高載子遷移率。單原子層WS2為一種最常被研究的過渡金屬二硫族化合物(TMD)材料，實驗上已被作為電晶體的通道材料來使用，並展

示出高電流開關比、高載子遷移率及高熱穩定性。發展WS2電晶體最迫切的挑戰在於降低接觸電阻，在本論文中，我們施以第一原理量子傳輸計算來研究Metal/WS2與Metal/WSX/WS2側接觸，試圖以硫族元素之取代來降低蕭特基位障，因此減少接觸電阻。在此該取代使用了五族或七族元素取代單層WS2一側部分區域之硫族元素，產生超材料WSX (X= P, As, F, Cl, Br)的部分。另外，我們進一步比較該取代在界面金屬化與界面鍵結以及其在蕭特基位障的效果。如此之WSX緩衝接觸展示了p型Pt/WSP/WS2側接觸和n型Ti/WSCl/WS2側接觸的接觸電阻分別低至122.4Ω∙μm與97.9Ω∙μm

。此外，我們也利用第一原理分子動力學觀測到室溫下穩定的單層WSX。