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低功耗高性能電流式感測放大器設計

為了解決SUMI SUMI : matching的問題，作者梁文顏 這樣論述：

Table of ContentsRecommendation Letters from Thesis AdvisorsThesis/Dissertation Oral Defense Committee CertificationPreface iiiAbstract ivTable of Contents vList of Figures viiList of Tables xiChapter 1 Introduction 11.1 Memory and Processors 21.2 Sense Amplifiers 31.3 Technology Trends 41.4 Circui

t Trends 51.5 Other Trends 61.6 SRAM Trends 71.7 Associated Challenges 9Chapter 2 A Circuits Survey 102.1 The Two Broad Classes 102.2 Voltage Sensing 122.3 Current Sensing 162.4 Others 20Chapter 3 Development of a Three-Transistor I–V Converter 223.1 Low Drop-Out Voltage Regulator as a I–V Converter

233.2 I–V Converter as a Current Sense Amplifier 253.3 Simplifying the I–V Converter 253.4 Proof of Concept 273.5 Quest for a Better Error Amplifier 293.6 Revisiting the Proof of Concept 31Chapter 4 Implementation of a Current Sense Amplifier 344.1 Sense Amplifier Shut-Down 344.2 Static Power Reduc

tion 364.3 Pulsed Word-Line Operation 374.4 Bit-Line Capacitance—Effect on Delay 394.5 Bias Variation 414.6 Relevant Concerns 43Chapter 5 Conclusion 445.1 Simulation Results 445.2 Considerations for Long Bit-Lines 465.3 Measurements 475.4 Derivative Circuits 495.5 Derivative Use 525.6 Summary 555.7

Final Thoughts 55References 56Appendices 83List of FiguresFigure 1.1 Die micrograph from [Singh et al., 2018] 2Figure 1.2 Layout from [Takemoto et al., 2020] 2Figure 1.3 Package from [Poulton et al., 2019] 4Figure 1.4 Wearable for happiness index from [Yano et al., 2015] 6Figure 1.5 Test chip from [

Song et al., 2017] 7Figure 2.1 Left–right: nMOS common-source, -gate and -drain amplifier configurations 10Figure 2.2 Left–right: pMOS common-drain, -gate and -source amplifier configurations 11Figure 2.3 Bi-stable constructed of two inverters 11Figure 2.4 Regenerative latch transient simulation out

put 11Figure 2.5 nMOS differential pair 12Figure 2.6 nMOS–input pair differential amplifier 13Figure 2.7 Clocked latch with isolation 14Figure 2.8 Current-controlled latch 15Figure 2.9 Left–right: Resistor and nMOS approximates 16Figure 2.10 Left–right: Resistor and pMOS approximates 16Figure 2.11 n

-p-n common-base amplifier 17Figure 2.12 Partial schematic from [Yeo and Rofail, 1995] 17Figure 2.13 Left–right: nMOS and pMOS current mirrors 18Figure 2.14 Current sense amplifier from [Ishibashi et al., 1995] 18Figure 2.15 Current sense amplifier from [Seno et al., 1993] 19Figure 2.16 Current conv

eyor from [Seevinck et al., 1991] 19Figure 2.17 pMOS-neutralised nMOS differential pair 20Figure 2.18 Λ-type negative resistance from [Wu and Lai, 1979] 21Figure 2.19 I D -V D characteristic of the Λ-type negative resistance 21Figure 3.1 Three-transistor I–V converter 22Figure 3.2 Simplified low dro

p-out voltage regulator 23Figure 3.3 Low drop-out voltage regulator configured as a I–V converter 24Figure 3.4 Low drop-out voltage regulator as a current sense amplifier 25Figure 3.5 Reference-free I–V converter 26Figure 3.6 Logic inverters as positive-gain amplifier 26Figure 3.7 Proof of concept d

esign 27Figure 3.8 Proof of concept design transient simulation output 28Figure 3.9 Typical and unintended input(s) of the logic inverter 29Figure 3.10 Normalised absolute gain plot for each inverter input 30Figure 3.11 Connections made for the absolute gain plot 30Figure 3.12 Bias generator for the

absolute gain plot 31Figure 3.13 Error amplifier replacement in the proof of concept design 31Figure 3.14 Three-transistor I–V converter 32Figure 3.15 Corresponding bias generator of Figure 3.14 32Figure 3.16 Simulation circuit for verifying the improved error amplifier 33Figure 3.17 Demonstration

of the three-transistor I–V converter as a current sense amplifier 33Figure 4.1 Actions to achieve desired node characteristics during shut-down 34Figure 4.2 Figure 3.14 modified for shut-down 35Figure 4.3 Corresponding bias generator of Figure 4.2 35Figure 4.4 Shared use of bias generator 36Figure

4.5 Pseudo-differential version of Figure 4.4 37Figure 4.6 Pseudo-differential configuration of Figure 3.14 37Figure 4.7 Pulsed read of a ZERO 38Figure 4.8 Pulsed read of a ONE 38Figure 4.9 Differential development across dynamic bit-lines and csa outputs 39Figure 4.10 Delay behaviour with capacitiv

e bit-line loading 40Figure 4.11 Normalised csa bias current variation with supply voltage 41Figure 4.12 Normalised csa bias current variation with temperature 42Figure 4.13 Mismatch view of Figure 3.14 43Figure 5.1 Test set-up (external trigger connection not drawn) 47Figure 5.2 Oscillogram demonst

rating circuit functionality at VDD = 2.55V 47Figure 5.3 Test set-up photograph 48Figure 5.4 Left–right: Three-transistor I–V converter and its complement 49Figure 5.5 Transfer characteristics of the circuits in Figure 5.4 49Figure 5.6 Four-transistor I–V converter 50Figure 5.7 Corresponding bias ge

nerator of Figure 5.6 50Figure 5.8 Impact of sizing on AC performance 51Figure 5.9 Left–right: V SS -, V DD -referenced and floating optical receiver front ends 52Figure 5.10 Transfer characteristic of floating I–V converter 53Figure 5.11 High output resistance eases filter realisation 53Figure 5.12

Three-transistor I–V converter operating as an open-drain receiver 54Figure A.1 inv symbol 84Figure A.2 Alternate inv symbol 84Figure A.3 inv transistor-level schematic 84Figure A.4 inv4 symbol 85Figure A.5 inv4 transistor-level schematic 85Figure A.6 inv16 symbol 86Figure A.7 inv16 transistor-leve

l schematic 86Figure A.8 nand2 symbol 87Figure A.9 nand2 transistor-level schematic 87Figure A.10 nand2b symbol 88Figure A.11 nand2b gate-level schematic 88Figure A.12 nor2 symbol 89Figure A.13 nor2 transistor-level schematic 89Figure A.14 nor2b symbol 90Figure A.15 nor2b gate-level schematic 90Figu

re A.16 or2 symbol 91Figure A.17 or2 gate-level schematic 91Figure A.18 tinv symbol 92Figure A.19 tinv transistor-level schematic 92Figure A.20 dlat symbol 93Figure A.21 dlat gate-level schematic 93Figure A.22 dlatr symbol 94Figure A.23 dlatr gate-level schematic 94Figure A.24 dlats symbol 95Figure

A.25 dlats gate-level schematic 95Figure A.26 tie0 symbol 96Figure A.27 tie0 transistor-level schematic 96Figure A.28 tie1 symbol 97Figure A.29 tie1 transistor-level schematic 97Figure B.1 bit0 symbol 99Figure B.2 bit0 transistor-level schematic 99Figure B.3 bit1 symbol 100Figure B.4 bit1 transistor

-level schematic 100Figure B.5 blrc symbol 101Figure B.6 blrc cell-level schematic 101Figure B.7 pre symbol 102Figure B.8 pre transistor-level schematic 102Figure B.9 rblrc symbol 103Figure B.10 rblrc cell-level schematic 103Figure B.11 wr symbol 104Figure B.12 wr transistor-level schematic 105Figur

e B.13 anand2 symbol 106Figure B.14 Alternate anand2 symbol 106Figure B.15 anand2 transistor-level schematic 107Figure B.16 ckgen symbol 108Figure B.17 ckgen gate-level schematic 108Figure B.18 peri symbol 109Figure B.19 peri cell-level schematic 110Figure B.20 csa symbol 111Figure B.21 csa transist

or-level schematic 111Figure B.22 kobl symbol 112Figure B.23 Alternate kobl symbol 112Figure B.24 kobl transistor-level schematic 113Figure B.25 kobs symbol 114Figure B.26 kobs transistor-level schematic 114Figure C.1 sram1 symbol 116Figure C.2 sram1 block-level schematic 117Figure C.3 sram2 symbol

118Figure C.4 sram2 block-level schematic 119Figure C.5 sram3 symbol 120Figure C.6 sram3 block-level schematic 121Figure D.1 ainvl symbol 123Figure D.2 ainvl transistor-level schematic 123Figure D.3 ainvs symbol 124Figure D.4 Alternate ainvs symbol 124Figure D.5 ainvs transistor-level schematic 124F

igure D.6 cut symbol 125Figure D.7 cut cell-level schematic 126Figure D.8 inAmp symbol 127Figure D.9 inAmp cell-level schematic 127Figure D.10 CD4007 symbol 128Figure D.11 CD4007 transistor-level schematic 128Figure D.12 LF356 symbol 129Figure D.13 LF356 cell-level schematic 129Figure D.14 TL431 sym

bol 130Figure D.15 TL431 cell-level schematic 130Figure D.16 tialp symbol 131Figure D.17 tialp transistor-level schematic 131Figure D.18 tiasd symbol 132Figure D.19 tiasd transistor-level schematic 132Figure D.20 tiasn symbol 133Figure D.21 tiasn transistor-level schematic 133Figure D.22 tiasp symbo

l 134Figure D.23 tiasp transistor-level schematic 134Figure E.1 nfet and equivalent nMOS symbol 135Figure E.2 pfet and equivalent pMOS symbol 136Figure E.3 Circuit for estimating per-bit junction capacitance 137Figure E.4 Simulation output for estimating per-bit junction capacitance 138Figure E.5 Ci

rcuit for estimating per-bit bit-line leakage current 138Figure E.6 ID-VD characteristics 139Figure E.7 ID-VG characteristics 140Figure E.8 anand2 transistor-level schematic 141Figure E.9 Test board functional blocks 144Figure E.10 Test board block-level schematic 145Figure E.11 Signal source connec

ted to abbreviated input network 148Figure E.12 General form of a typical instrumentation amplifier 150Figure E.13 Inverting integrator section of test board 154List of TablesTable 1.1 Semiconductor memory hierarchy 1Table 5.1 Column height h = 512b 44Table 5.2 Column height h = 1Kb 44Table 5.3 Colu

mn height h = 2Kb 44Table 5.4 Summarised measurement results 48Table A.1 List of standard cells 83Table A.2 inv truth table 84Table A.3 inv4 truth table 85Table A.4 inv16 truth table 86Table A.5 nand2 truth table 87Table A.6 nand2b truth table 88Table A.7 nor2 truth table 89Table A.8 nor2b truth tab

le 90Table A.9 or2 truth table 91Table A.10 tinv truth table 92Table A.11 dlat truth table 93Table A.12 dlatr truth table 94Table A.13 dlats truth table 95Table A.14 tie0 truth table 96Table A.15 tie1 truth table 97Table B.1 List of custom cells 98Table B.2 pre truth table 102Table B.3 wr truth tabl

e 104Table C.1 SRAM cells and read path configurations 115Table D.1 List of other cells 122Table E.1 Transistor performance 140Table E.2 Primary bill of materials 146Table E.3 Additional hardware 147Table E.4 List of instruments 155Table F.1 List of abbreviations 158Table F.2 List of symbols 159Tabl

e F.3 List of AC quantities 160Table F.4 List of DC quantities 161Table F.5 List of partial-swing signals 162Table F.6 List of rail–rail signals 162Table F.7 List of instance names 163

區塊鏈結合遊戲化群眾外包平台之使用意圖研究—以假新聞查核機制為例

為了解決SUMI SUMI : matching的問題，作者王緯璿 這樣論述：

隨著網路科技與社群網站蓬勃發展，加速了人們之間的連結，社群網站每天被數百萬人用作主要的討論渠道，人們已習慣在社群網站上與他人交流互動，會分享許多資訊，其資訊中包含新聞，超過60％的成年人從社群網站獲得新聞，許多用戶在分享新聞的過程中，很容易將假新聞分享出去，人們會相信假新聞，是因為很多的假新聞可能是源自信譽良好的新聞媒體發佈或親朋好友，為了解決信譽問題，很多研究運用區塊鏈，讓新聞資料上鏈，使資料難以竄改，幫助人們溯源，分辨新聞是否是為了誤導民眾而臨時編造，還是使用以前的照片冒充其他新聞。近年來假新聞透過社群平台迅速的傳播，國內外有許多民間團體成立群眾外包平台打擊假新聞，然而這些群眾外包平台通

常都會遇到人力不足的問題，因為驗證新聞內容需要大量人力，使得平台驗證速度往往跟不上假新聞產生速度；許多研究已經證實使用遊戲化是有效提升民眾參與群眾外包的方法，但並沒有針對遊戲化假新聞群眾外包平台的研究。基於以上論述，本研究使用八角框架在群眾外包假新聞查核平台設計上和使用智能合約具有公開透明的特性開發系統平台，藉此提高民眾的使用意圖與對平台的信任度，並以Viitamaki針對群眾外包提出的FLIRT的五個構面結合軟體可用性測量問卷，以此評估是否會提升民眾對遊戲化群眾外包假新聞查核平台的使用意圖。本研究經過文獻探討並開發系統平台後，進行專家訪談，從專家們體驗後的結果獲得正面的評價，但仍有不足之處，

因此依據對專家建議進行調整與優化。本研究正式實驗邀請受測者體驗平台，透過軟體可用性測量問卷分析，研究結果多數受測者對於FLIRT模型的五構面皆表示認同，並在焦點和誘因構面獲得受測者較高的評分，表示此平台遊戲化功能，可以有效提升使用者參與群眾外包動機；在規則構面獲得較低的評分，經問卷開放式問答分析後，推斷其原因是智能合約沒有實體介面，受測者較難體驗到智能合約存在；其中無使用過假新聞查核服務經驗的受測者對於本研究平台運用智能合約設計的功能，更無法認同；而有經驗者在使用本研究開發平台時，更能認同平台的群眾外包目標，並在使用過程中對平台交流功能有較高的滿意度。